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MacKay Neal simpli ed version, and in a logarithmic version (Section 87) These algorithms operate on the basis of a convergent updating of interchange information communicated between the symbol nodes and the parity check nodes In what follows, the convention 0 +1 1 1 is adopted to simplify the mathematical expressions involved in extrinsic information transfer (EXIT) chart analysis for LDPC codes A given LDPC code Cb (n, k), of code rate R = k/n has n symbol nodes and n k parity check nodes, connected as described by the corresponding bipartite graph The bit or symbol ( j) d j participates in dv parity check equations, which means that, in the corresponding bipartite ( j) graph, this symbol node is connected to s ( j) = dv parity check nodes, where s ( j) is the number of 1 s per column of the parity check matrix H.

In the same way, the parity check node h i (i) relates dc symbol nodes or bits in its corresponding parity check equation, so that in the (i) corresponding bipartite graph this parity check node is connected to v (i) = dc symbol nodes ( j) ( j) (i) (i) In a regular LDPC code, the quantities s = dv and v = dc are the same for every row and column, respectively Example 82: Form the sparse parity check matrix H of a regular LDPC code Cb (14, 7) of code rate Rc = 1/2 for which dv = 3 and dc = 6.

An example of a matrix of this kind is the following: 1 1 0 1 0 0 0 1 0 1 0 0 0 1 0 1 1 0 1 0 0 0 1 0 0 0 1 1 0 0 1 1 0 1 0 1 0 0 0 1 1 0 H = 0 0 0 1 1 0 1 0 0 0 1 1 0 1 1 0 0 0 1 1 0 0 0 1 1 0 1 0 0 1 0 0 0 1 1 0 1 1 0 1 0 0 1 0 1 0 0 0 1 1 1 0 1 0 0 0 Example 82 is an illustrative example of a regular LDPC code that has a bipartite graph like that of Figure 8.

As the spacer width decreases, the cutoff frequencies decrease because of to an increase of the emitter base and collector base capacitances In addition the BVEBO decreases and the ILEBO increases As the spacer width decreases, it has been shown that the leakage current transitions from a temperature sensitive temperature insensitive This indicates transition from thermal leakage mechanism (eg, Shockley Read Hall, Frenkel Poole) avalanche multiplication to tunneling mechanisms (eg, trap-to-band and band-toband tunneling) Refractory metal lms are used in semiconductors in conjunction with silicon to form silicide lms Silicide are used in semiconductor technology to form low resistance regions where resistance is an impediment to design or chip performance Silicide formation in the emitter base region of a selective epitaxial bipolar transistor in uences the ESD robustness of the bipolar transistor In the emitter base design, the placement of silicide in uences the base resistance.

8, where it is seen that there are cycles of length 4, one of which is noted in bold line in this gure As seen in Figure 88, there are three connections emerging from each symbol node, and there are six connections arriving at each parity check code The bipartite graph can be interpreted as an interleaving of connections This is seen in Figure 89 The graphical representation as given in Figure 89 then allows us to see a given LDPC code as a code constructed using two encoders, each one with its corresponding decoder There is a code for the symbol nodes and another code for the parity check nodes, which are related through a connection interleaver like that seen in Figure 89.

This connection interleaver acts during the iterative decoding process, which consists of the interchange of soft-decision information (LLRs) between the symbol node decoder (SND) and the parity check node decoder (PCND), as shown in Figure 810 [14] The MAP decoder converts a priori and channel LLRs into a posteriori LLRs Both decoders, the SND and the PCND, perform this type of operation, generating LLRs as their outputs If the a priori LLR is subtracted from the corresponding.

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The silicide in uences the current density and the current distribution in the extrinsic base structure Salicide formation of the extrinsic base region has no in uence on the intrinsic region of the bipolar transistor In the external base region, the link resistance is also not in uenced by the salicide formation The rst two components of the external resistance expression are a.

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